
Dr. Ibrahim Abdel-Motaleb
Dr. Ibrahim Abdel-Motaleb
Department of Electrical Engineering
Engineering Building - Room 332
Northern Illinois University
DeKalb, IL 60115 U.S.A.
Phone: (815) 753-8570 Fax: (815) 753-1289
E-mail: ibrahim@niu.edu
Dr. Abdel-Motaleb testified in the court of law as an expert witness regarding the performance of electronic systems.
Referred Publications
1. Ibrahim M. Abdel-Motaleb, F. Konopasek, and S. El-Nahawy, "Theory of Rod and Half Rod Concentrator Solar Cells", Proceedings of the E.C. Photovoltaic Solar Energy Conference, pp. 250-253, Athens, 1982.
2. W. Tang, K. Lowe, Ibrahim Abdel-Motaleb, and L. Young, “Back-gating in Ion Implanted GaAs MESFETs," Journal of the Electrochemical Society, p. 2794, November 1985.
3. S. Dendo, Ibrahim Abdel-Motaleb, K. Lowe, and L. Young, "Deep Levels in Semi-Insulating LEC GaAs Before and After Silicon Implantation," Journal of the Electrochemical Society, p. 2673, November 1985.
4. "Deep Levels in GaAs before and After Si implantation," Presented at the Symposium of the state of the art program on compound semiconductors, Electrochemical Society, Toronto Canada, May 1985.
5. Ibrahim M. Abdel-Motaleb, and L. Young, "The Common Drain Directly Coupled FET Logic Approach and Its Applications in VLSI Systems,” Proceedings of the 29th Midwest Symposium on Circuits and Systems, pp. 781-784, August 1986.
6. Ibrahim M. Abdel-Motaleb and L. Young, "GaAs Common Drain Logic (CDL), The Proceedings of the IEEE Region V Conference, pp. 68-73, March 1987.
7. Ibrahim M. Abdel-Motaleb and L. Young, "Investigation of the Temperature Dependence of GaAs MESFET Parameters," The Proceedings of the IEEE Region V Conference, pp. 51-56, March 1987.
8. Ibrahim M. Abdel-Motaleb and L. Young, “Characterization of Saturated Resistors for GaAs High Speed Digital to Analog Converters," Proceedings of the 30th Midwest Symposium on Circuits and Systems, pp. 682-685, Syracuse, August 1987.
9. Ibrahim M. Abdel-Motaleb, and L. Young, "A Simple Self Aligned GaAs MESFET Using Polyimide," Solid State Electronics, Vol. 30 No. 4, p 361 April 1987.
10. Ibrahim M. Abdel-Motaleb, W. Rutherford, and L. Young, "GaAs Inverted Common Drain Logic (ICDL) and Its Performance Compared With Other GaAs Logic Families," Solid State Electronics, Vol. 30, No. 4 p. 403, April 1987.
11. T. L. Syu and Ibrahim M. Abdel-Motaleb, "An Analytical MODFET Charge Control Model for CAD Applications," Proceedings of the 32nd Midwest Symposium on Circuits and Systems, pp. 1263-1266, Urbana Illinois, August 1989.
12. D. Chu and Ibrahim M. Abdel-Motaleb, "BiCMES and BiCMOD: Bipolar-FET Logic Configurations For High Speed Applications," Proceedings of The IEEE Bipolar Circuits and Technology Meeting, pp. 311-314, Minneapolis, MN, September 1989.
13. C. N. Huang and Ibrahim M. Abdel-Motaleb, "A Gummel-Poon Model For Single and Double Heterojunction Bipolar Transistors," Proceedings of The IEEE Bipolar Circuits and Technology Meeting, pp. 254-257, Minneapolis, MN, September 1989
14. Ibrahim M. Abdel-Motaleb and T. L. Syu, "An Analytical Charge Control Model for AlGaAs MODFETs," Journal of Applied Physics, pp. 3141-3147, March 15, 1990.
15. B. Ryum and Ibrahim M. Abdel-Motaleb, "A Gummel-Poon Model for Abrupt and Graded HBTs," Solid State Electronics, Vol. 33, No. 7, pp. 869-880, July 1990.
16. Ibrahim M, Abdel-Motaleb and A. Razdan, "Analysis of Latch-up in GaAs Complementary Logic Structures,” Proceedings of the 33rd Midwest Symposium on Circuits and Systems, pp. 239-242, Calgary, Canada, August 1990.
17. Y. Maa and Ibrahim M, Abdel-Motaleb, "Analysis of the Switching Characteristics of NMOS Common Drain FET Logic,” Proceedings of the 33rd Midwest Symposium on Circuits and Systems, pp. 926-929, Calgary, Canada, August 1990.
18. H-K. Lin and Ibrahim M, Abdel-Motaleb "Non-Quasi-Static Modeling Technique for Microwave GaAs FETs,” Proceedings of the 33rd Midwest Symposium on Circuits and Systems, pp. 621-524, Calgary, Canada, August 1990.
19. Ibrahim M, Abdel-Motaleb and J-F Horng, "Large and Small Signal Models for Simulation of High Speed MODFET ICs," Proceedings of Antenna Technology and Applied Electromagnetics Symposium, pp. 696-701, Winnipeg Manitoba Canada, August 115-117 1990.
20. C-N. Lin and Ibrahim M, Abdel-Motaleb, "Nonlinear Modeling of GaAs FET Parasitic Resistance's" Proceedings of Antenna Technology and Applied Electromagnetics Symposium, pp. 724-729, Winnipeg Manitoba Canada, August 115-117 1990.
21. B. Ryum and Ibrahim M. Abdel-Motaleb, "Investigation of Current Transport and Charges in Graded Base HBTs," Proceedings of The IEEE Bipolar Circuits and Technology Meeting, pp. 199-202, Minneapolis, MN, September 1990.
22. B. Ryum and Ibrahim M, Abdel-Motaleb, "Effect of Recombination Current on HBT Current Gain," IEE Proceedings on Circuits, Devices and Systems, Part G., pp. 115-119, February 1991.
23. C. N. Huang and Ibrahim M, Abdel-Motaleb, "A Gummel-Poon Model for Single and Double HBTs," IEE Proceedings on Circuits, Devices and Systems, Part G., pp. 165-169, April 1991.
24. B. Ryum and Ibrahim M, Abdel-Motaleb, "Modeling of Junction Capacitance of Graded Base HBTs," Solid State Electronics, Vol. 34. No. 5, pp. 481-488, May 1991.
25. C. C. Yu and Ibrahim M, Abdel-Motaleb, "An Analytical Model For Current-Voltage Characteristics of Quantum-Well Heterojunction Field Effect Transistors," Solid State Electronics, Vol. 34, No. 5, pp. 567-579, May 1991.
26. David C. Yu and Ibrahim M, Abdel-Motaleb, "An Analytical Charge Control Model for p-Type Quantum Well HEMTs," The Pittsburgh Conference on Modeling and Simulation, May 2-3, 1991
27. David C. Yu and Ibrahim M, Abdel-Motaleb, "Estimation of the 2DEG location in Quantum Well Structures" Solid State Electronics, Vol. 34, No. 10, p. 1179, October 1991.
28. B. Ryum and Ibrahim M, Abdel-Motaleb, "An Analytical All Injection Charge Based Model for Graded Base HBTs," Solid State Electronics, Vol. 34, No. 10, pp. 1125-1139, October 1991.
29. H-K. Lin and Ibrahim M, Abdel-Motaleb, "Small Signal Non-Quasi-Static Model for CAD Application: Part I. MODFETs" IEE Proceedings on Circuits, Devices and Systems, Part G., Vol. 138, No. 6, pp. 735-748, December, 1991.
30. H-K. Lin and Ibrahim M, Abdel-Motaleb, "Small Signal Non-Quasi-Static Model for CAD Application: Part II. MESFETs" IEE Proceedings on Circuits, Devices and Systems, Part G., Vol. 138, No. 6, pp. 749-755, December 1991.
31. C. Li and Ibrahim M. Abdel-Motaleb, "Nonlinear Parasitic Resistance Model for MODFETs" Solid State Electronics, Vol. 35, No. 6, pp. 759-767, June 1992.
32. Jeffrey Huang and Ibrahim M. Abdel-Motaleb, "Large Signal Non-Quasi-Static Model for Single and Double Heterojunction Bipolar Transistors," Solid State Electronics, Vol. 35, No. 8, pp. 1093-1098, August 1992.
33. David C. Yu and Ibrahim M, Abdel-Motaleb, "An Analytical d.c. Model for p-Type Quantum Well HEMTs" IEE Proceedings on Circuits, Devices and Systems, Part G., Vol. 140, No 1., pp. 7-15, February 1993.
34. Jeffrey Huang and Ibrahim M. Abdel-Motaleb, "Small Signal Non-Quasi-Static Model for Heterojunction Bipolar Transistors," Solid State Electronics, Vol. 36, No. 7, pp. 1027-1034, July 1993.
35. Jeffrey Huang and Ibrahim M. Abdel-Motaleb, "Non-Quasi-Static Modeling of HBT Junction Capacitance's," Solid State Electronics, Vol. 26, No. 11, pp. 1583-1592, November 1993.
36. P. Desai and Ibrahim M. Abdel-Motaleb, "Recent Advances is Zinc-Selenide Materials and Devices: An Overview", Proceedings of the Fifth International Conference on Microelectronics, p. 273, Dhahran, Saudi Arabia, Dec. 13-16 1993.
37. Ibrahim M. Abdel-Motaleb, P. Desai, and S. Pal“Design, Construction, and Testing of an MOCVD Crystal Growth System For Building Blue Laser Diodes,” The Fourth IEEE International Conference on Electronics, Circuits, and Systems, ICECS’97, Cairo, Egypt, December 15-18, 1997.
38. Ibrahim M. Abdel-Motaleb, S. Pal, and P. Desai “Material Growth and Characterization of ZnSe/Ge Heterojunctions,” The Fourth IEEE International Conference on Electronics, Circuits, and Systems, ICECS’97, Cairo, Egypt, December 15-18, 1997.
39. Yann Maa, Ibrahim M. Abdel-Motaleb, and Martin Plonus, “Investigation of Diode Space Charge Region Model Based on Theories of Thermodynamics,” The Fourth IEEE International Conference on Electronics, Circuits, and Systems, ICECS’97, Cairo, Egypt, December 15-18, 1997.
40. Yann Maa, Ibrahim M. Abdel-Motaleb, and Martin Plonus, “Modeling and Simulation of p-n Junction Diodes Using the Theory of Thermodynamics,” The Fourth IEEE International Conference on Electronics, Circuits, and Systems, ICECS’97, Cairo, Egypt, December 15-18, 1997.
41. Ibrahim M. Abdel-Motaleb, S. Pal, and P. Desai, “Growth of ZnSe/GaAs and ZnSe/Ge Using Atmospheric Pressure Chemical Vapor Deposition,” Journal of the Electrochemical Society, ESL, vol. 3, no. 6, p. 293, 2000.
42. Ibrahim M. Abdel-Motaleb, S. Pal, and P. Desai, “Characterization of ZnSe/Ge material growth using the Atomic Force Microscope,” Journal of Crystal Growth, Vol. 217, No. 4, pp. 366-370, August 2000.
43. Yann Maa and Ibrahim Abdel-Motaleb,”Modeling and simulation of bipolar junction transistors using the theories of thermodynamics. J. of Applied Physics, Vol. 88, No. 10, pp 5959-5964,15, November 2000.
44. Yann Maa and Ibrahim Abdel-Motaleb, "Analysis of the diode characteristics using the thermodynamics theory" Solid state Electronics, Vol. 46, No. 5, pp 735-742, May 2002.
45. Ibrahim M. Abdel-Motaleb, O. Auciello, J. Carlisle, D. Gruen, and James Birrell. “Effect of temperature on nanocrystalline diamond field emission device characteristics,” Device Research Conference, Salt Lake City, UH, June 23-25, 2003.
46. Ibrahim Abdel-Motaleb and Roman Korotkov, “Modeling of GaN electron mobility,” The 11th IEEE International Symposium on Electron Devices for Microwave & Optoelectronic Applications, University of Central Florida, Orlando, USA, 17-18 November 2003.
47. Radhika Chintakayala and Ibrahim Abdel-Motaleb, Small Signal Non-Quasi-Static Model for AlGaN/GaN MODFETs,” The 7th International conference on solid state and integrated circuit technology, Beijing, China, October 18-21, 2004.
48. Ibrahim Abdel-Motaleb, “Non-Quasi-Static Modeling of heterojunction bipolar transistors,” The 7th International conference on solid state and integrated circuit technology, Beijing, China, October 18-21, 2004.
49. Ibrahim Abdel-Motaleb, “Teaching microelectronic courses using MathCAD,” presented in the ASEE, Illinois-Indiana Chapter conference, held at Northern Illinois University, DeKalb, IL, April 1-2, 2005. (http://www.ceet.niu.edu/ASEE_ILIN/)
50. Ibrahim M. Abdel-Motaleb and Gauthami Arikatla “Non-Quasi-Static Modeling of Field Effect Transistors” ISDRS symposium, Bethesda, MD, 2005.
51. Ibrahim Abdel-Motaleb and J. Lagu, “Modeling and analysis of ZnSe/Ge heterojunction bipolar transistor,” IEEE Transaction on Electron Devices, Vol. 52, No 3, pp299-304, March 2005.
52. Ibrahim M. Abdel-Motaleb, R. Roman, “Modeling of GaN Mobility,” Journal of applied Physics, Vol. 97, 093714, May 1, 2005.
53. Ibrahim M. Abdel-Motaleb, R. Roman, “Response to “Comment on ‘Modeling of the electron mobility in GaN materials’” Journal of applied Physics, Vol. 99, 036107, 2006.
54. Praveen Navuduri, Ibrahim Abdel-Motaleb, Young Yoo, and Omar Chmaissem “Characterization of Large Area PLD Grown Combinatorial Compositions of Barium Strontium Titanium Oxides” The 8th International conference on solid state and integrated circuit technology, Shanghai, China, October 23-26, pp. 1004-1006, 2006.
55. Shbna Asmi and Ibrahim M. Abdel-Motaleb, “Effect of Traps and Self Heating on the Microwave Performance of SiC MESFETs,” The 8th International conference on solid state and integrated circuit technology, Shanghai, China, October 23-26, 2006.
56. Ibrahim Abdel-Motaleb, “Diamond Technology: An Overview, Invited Paper, “ The 8th International conference on solid state and integrated circuit technology, Shanghai, China, October 23-26, 2006.
57. Nita Rai and Ibrahim M. Abdel-Motaleb, “Characterization of Microbridge Gas-Flow Sensor,” IEEE EIT 2007 Proceedings, pp.453-458, 2007.
58. Martin Kocanda and Ibrahim M. Abdel-Motaleb, “Design of a DNA Probe Using Barium Strontium Titanate” submitted to The International conference on solid state and integrated circuit technology, Shanghai, China, October 20-23, 2008.
59. Martin Kocanda and Ibrahim M. Abdel-Motaleb, “DNA Sensing – an Overview of Present Technology and Future Trends” submitted to The International conference on solid state and integrated circuit technology, Shanghai, China, October 20-23, 2008
60. Ibrahim M. Abdel-Motaleb, Neeraj Shetty, Kevin Leedy, and Rebecca Cortez “Investigation of the Drain Current Shift in ZnO Thin Film Transistors,” ISDRS 2009, December 9-11, 2009, College Park, MD, USA.
61. Ibrahim M. Abdel-Motaleb, Sensors for the Heart,” M2M magazine, p. 32, November/December 2009.
62. Martin Kocanda and Ibrahim M. Abdel-Motaleb, “Development of a DNA probe using barium strontium titanate,” J. Applied Physics, accepted, p 123916, 2009.
63. Martin Kocanda and Ibrahim M. Abdel-Motaleb "Development of a DNA probe using barium strontium titanate," Virtual Journal of Biological Physics Research, January 1, 2010. http://vjbio.aip.org/getpdf/servlet/GetPDFServlet?filetype=pdf&id=JAPIAU000106000012123916000001&idtype=cvips&src=vj&subid=VIRT02.
64. Martin Kocenda and Ibrahim M. Abdel-Motaleb, “DNA detection using a CMOS ring oscillator circuit,” J. Applied Physics, p. 76103, 2010.
65. Mark Austin and Ibrahim Abdel-Motaleb, Integrated Ballisto-Cardio-Diagnostic System for Doctor’s Office, American Medical Association-IEEE conference, March 21-23, Washington DC, 2010.
66. Ibrahim M. Abdel-Motaleb, Neeraj Shetty, Kevin Leedy, and Rebecca Cortez “Investigation of the Drain Current Shift in ZnO Thin Film Transistors,” Journal of Applied Physics, p. 014503, 2011.
List of funding from 1986-1992:
210. ENGINEERING CIRCUIT ANALYSIS (4)
330. ELECTRONIC CIRCUITS (4)
335. THEORY OF SEMICONDUCTOR DEVICES I (3)
420. MEDICAL INSTRUMENTATIONS (4)
421. BIOMEDICAL SENSOR ENGINEERING (3)
431. THEORY OF SEMICONDUCTOR DEVICES II (3)
432. SEMICONDUCTOR DEVICE FABRICATION LABORATORY (3)
433. DESIGN OF GALLIUM ARSENIDE INTEGRATED CIRCUITS (3)
434. SEMICONDUCTOR MATERIAL AND DEVICE CHARACTERIZATION (3)
491. ELECTRICAL ENGINEERING DESIGN PROPOSAL (1)
492. ELECTRICAL ENGINEERING DESIGN PROJECT (3)
520. MEDICAL INSTRUMENTATIONS (4)
521. BIOMEDICAL SENSOR ENGINEERING (3)
531. THEORY OF SEMICONDUCTOR DEVICES II (3)
532. SEMICONDUCTOR DEVICE FABRICATION LABORATORY (3)
533. DESIGN OF GALLIUM ARSENIDE INTEGRATED CIRCUITS (3)
534. SEMICONDUCTOR MATERIAL AND DEVICE CHARACTERIZATION (3)
635. ADVANCED ELECTRONIC DEVICES (3)
636. DESIGN OF MICROSYSTEMS (3)